Epitaxial synthesis of graphene on 4H-SiC by microwave plasma chemical vapor deposition
نویسندگان
چکیده
منابع مشابه
Heteroepitaxial diamond growth on 4H-SiC using microwave plasma chemical vapor deposition
Deposition of heteroepitaxial diamond via microwave chemical vapor deposition has been performed on a 4H-SiC substrate using bias enhanced nucleation followed by a growth step. In future work, the diamond film will serve as a protective layer for an alpha particle sensor designed to function in an electrorefiner during pyroprocessing of spent fuel. The diamond deposition on the 4H-SiC substrate...
متن کاملEffect of Growth Pressure on Epitaxial Graphene Grown on 4H-SiC Substrates by Using Ethene Chemical Vapor Deposition
The Si(0001) face and C(000-1) face dependences on growth pressure of epitaxial graphene (EG) grown on 4H-SiC substrates by ethene chemical vapor deposition (CVD) was studied using atomic force microscopy (AFM) and micro-Raman spectroscopy (μ-Raman). AFM revealed that EGs on Si-faced substrates had clear stepped morphologies due to surface step bunching. However, This EG formation did not occur...
متن کاملNitrogen-doped graphene by microwave plasma chemical vapor deposition
Available online 6 November 2012
متن کاملGraphene epitaxy by chemical vapor deposition on SiC.
We demonstrate the growth of high quality graphene layers by chemical vapor deposition (CVD) on insulating and conductive SiC substrates. This method provides key advantages over the well-developed epitaxial graphene growth by Si sublimation that has been known for decades. (1) CVD growth is much less sensitive to SiC surface defects resulting in high electron mobilities of ∼1800 cm(2)/(V s) an...
متن کاملGraphene sheets via microwave chemical vapor deposition
Centre Of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China c Functional Nano & Soft Materials Laboratory (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, China d Laboratory of Optoelectronic Functional Mate...
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ژورنال
عنوان ژورنال: Materials Research Express
سال: 2020
ISSN: 2053-1591
DOI: 10.1088/2053-1591/abcb3a